Skip to main content
Log in
Texas Instruments UCC27210DDAR — Power Management (PMIC / Gate Driver)

UCC27210DDAR 4A Half-Bridge MOSFET Driver, 120V Bootstrap

MPNUCC27210DDAR
Active

Texas Instruments UCC27210DDAR, half-bridge N-channel MOSFET driver, 4A peak source/sink, 7.2ns rise / 5.5ns fall typ, 120V bootstrap max, 8V~17V supply, -40°C~140°C TJ, 8-PowerSOIC with PowerPad.

$2.5000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

UCC27210DDAR specifications
ParameterValue
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage8V ~ 17V
Logic voltage - VIL, VIH2.4V, 5.9V
High side voltage - max (Bootstrap)120 V
Current - peak output (Source, sink)4A, 4A
Operating temperature-40°C~140°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-PowerSOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)7.2ns, 5.5ns

Product details

Half-bridge driver with 4 A gate drive and 120 V bootstrap ceiling

The Texas Instruments UCC27210DDAR is a high-frequency half-bridge driver for N-channel MOSFETs, delivering 4 A peak source and 4 A peak sink current to the gate load. The bootstrap supply is rated to 120 V maximum, which sets the upper DC-link voltage for the half-bridge topology. Two independent, non-inverting channels allow separate control of the high-side and low-side FETs with programmable dead-time inserted externally via the input logic timing.

Supply rail tolerance and logic-level compatibility

The 8 V to 17 V supply range covers the common 12 V bias rail with 4 V of headroom for transients and 4 V of margin below the nominal for cranking or brownout conditions. The logic input thresholds are specified at 2.4 V (VIL) and 5.9 V (VIH), which means a 3.3 V PWM controller output will not reliably drive the input high — a 5 V logic interface or a level-shifter is required. The 2.4 V VIL threshold is compatible with 3.3 V logic for the low state, but the 5.9 V VIH forces the use of a 5 V PWM signal or an external translator.

Frequently asked questions

Is UCC27210DDAR compatible with my N-channel half-bridge design?

Yes. The driver is configured for half-bridge operation with two independent, non-inverting channels. It drives N-channel MOSFETs on both the high-side and low-side. The bootstrap diode is integrated; an external bootstrap capacitor is required. The 4 A peak gate drive handles MOSFETs with gate charge up to about 100 nC at 500 kHz before the switching losses dominate the thermal budget.

What is the difference between UCC27210DDAR and UCC27211DDAR?

The UCC27211DDAR is the same half-bridge driver with identical 4 A peak drive, 120 V bootstrap, and 8-PowerSOIC package. The primary difference is the logic input thresholds: the UCC27211DDAR uses TTL-compatible thresholds (typically 1.6 V VIH) instead of the 5.9 V VIH on the UCC27210DDAR. For 3.3 V PWM controllers, the UCC27211DDAR is the direct-fit choice without an external level-shifter.