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UCC27210D

TI UCC27210D Half-Bridge MOSFET Driver, 4A Peak, 8-SOIC

MPNUCC27210D
Active

Texas Instruments UCC27210D, half-bridge gate driver, 2 independent channels, 4A peak output, 8V~17V supply, 120V bootstrap, 7.2ns rise/5.5ns fall, -40°C~140°C, 8-SOIC.

$2.0331Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

UCC27210D specifications
ParameterValue
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage8V ~ 17V
Logic voltage - VIL, VIH2.4V, 5.8V
High side voltage - max (Bootstrap)120 V
Current - peak output (Source, sink)4A, 4A
Operating temperature-40°C~140°C(TJ)
PackageTube
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)7.2ns, 5.5ns

Product details

4A peak drive for fast N-channel switching

Its headline spec is the 4A peak source and 4A peak sink output current, which directly determines how fast the MOSFET gates charge and discharge — and therefore the switching losses in the power stage. Typical rise time is 7.2 ns and fall time is 5.5 ns. The high-side bootstrap supply rail supports up to 120 V.

Temperature range and supply rails

Supply voltage range is 8 V to 17 V.

The base product number is UCC27210, and the D suffix indicates the 8-SOIC package variant.

Frequently asked questions

Does UCC27210D have undervoltage lockout?

Yes, the UCC27210D includes an undervoltage lockout (UVLO) on the supply rail. The UVLO threshold is typically around 7 V, ensuring the driver outputs remain off until the bias supply is above the minimum operating voltage, preventing the MOSFETs from operating in the linear region during power-up.