Half-bridge gate driver with 3 A peak drive
It delivers 3 A peak source and 3 A peak sink current, enough to charge and discharge the gate capacitance of medium-power MOSFETs in the 10–50 nC range at switching frequencies up to several hundred kilohertz. The bootstrap high-side supply is rated to 120 V maximum, so the part fits 48 V, 72 V, and 100 V bus designs with margin. The supply voltage range of 8 V to 17 V means a standard 12 V bias rail is right in the sweet spot.
Switching speed and thermal envelope
Typical rise time is 8 ns and fall time is 7 ns with a 1000 pF load. That edge rate keeps switching losses low, but the fast edges also demand tight layout — the gate-drive loop area needs to be minimised to avoid ringing that can exceed the MOSFET's Vgs rating. That extra headroom matters in a power supply sitting next to a hot transformer or in an engine-bay environment. A 3.3 V logic rail alone will not meet the VIH threshold — the controller's output must be 5 V tolerant or level-shifted.
The base product number is UCC27200.