Texas Instruments UCC27200ADRCT, half-bridge gate driver, 3A peak source/sink, 8ns rise / 7ns fall, 120V bootstrap max, 8V~17V supply, 9-VSON (3x3) package, -40°C~140°C.
| Parameter | Value |
|---|---|
| Gate type | N-Channel MOSFET |
| Input type | Non-Inverting |
| Channel type | Independent |
| Mounting | Surface Mount |
| Supply voltage | 8V ~ 17V |
| Logic voltage - VIL, VIH | 3V, 8V |
| High side voltage - max (Bootstrap) | 120 V |
| Current - peak output (Source, sink) | 3A, 3A |
| Operating temperature | -40°C~140°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | 10-VFDFN Exposed Pad, 9 Leads |
| Number of drivers | 2 |
| Driven configuration | Half-Bridge |
| Rise (Fall time) | 8ns, 7ns |
It delivers 3 A peak source and 3 A peak sink current.
The high-side driver is bootstrapped and rated for a maximum of 120 V between the switch node and the bootstrap supply pin.
Operating junction temperature spans -40°C to 140°C. Supply voltage is 8 V to 17 V.
Yes. The 9-VSON (3x3 mm) package includes an exposed thermal pad.
The driver is specified for N-channel MOSFETs. It can drive small IGBTs with similar gate charge (typically under 100 nC) but the 3 A peak current and 8 V logic-high threshold may not fully saturate larger IGBT modules. For IGBT-specific drivers, consider the UCC27531 or ISO5852S families.
No. The bootstrap diode is external. You must add a fast-recovery diode (e.g., 100 V, 1 A rated) and a bootstrap capacitor between the HB and HS pins. The capacitor value is typically 10 to 100 times the MOSFET gate charge divided by the bootstrap voltage ripple budget.