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Texas Instruments 54F189DLQB — Memory (DRAM / SRAM / Flash / EEPROM)

54F189DLQB 54F Series SRAM, 32 ns Access, -55 to 125°C

MPN54F189DLQB
Active

54F189DLQB, 54F series, Standard SRAM, 16 x 4 organization, 32 ns access time, parallel interface, 4.5 V supply, Through Hole, Bulk, -55 to 125°C operating temperature.

$6.49Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

54F189DLQB specifications
ParameterValue
Series54F
InterfaceParallel
MountingThrough Hole
Operating temperature high-55°C to 125°C (TA)
Frame_size64bit
Access time32 ns
Memory typeVolatile
Package_typeBulk
Memory formatRAM
StatusActive
Supply voltage4.5
Memory organization16 x 4
Write cycle time - word, page37.5ns

Product details

The 54F189DLQB is a 16 x 4 standard SRAM from the 54F series, a military-temperature logic family designed for high-reliability systems. It offers a 32 ns access time over the full -55 to 125°C range, making it suitable for avionics, missile guidance, satellite, and downhole applications where commercial-grade parts cannot survive. The parallel interface and 4.5 V supply align with legacy 5 V TTL bus architectures common in defence and aerospace platforms.

The 32 ns access time sets the read-cycle window for the memory bus. In a system clocked at 20 MHz or slower, this part meets the timing budget without wait states. The write cycle time is 37.5 ns, which paces the write strobe width.

For a military-temperature SRAM from the 54F series, this is notable — many legacy logic parts have moved to NRND or EOL.

Frequently asked questions

What is the access time and operating temperature of 54F189DLQB?

The 54F189DLQB has a 32 ns access time and is rated for operation from -55 to 125°C ambient.