Taiwan Semiconductor Corporation S1MLHRVG
MPNS1MLHRVG
Active
DIODE GEN PURP 1KV 1A SUB SMA
$0.5200Ref. price · indicative, final on quote
PackagingDO-219AB
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Standard |
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 1000 V |
| Voltage - forward (Vf) (Max) @ if | 1.1 V @ 1 A |
| Current - reverse leakage @ vr | 5 µA @ 1000 V |
| Current - average rectified | 1A |
| Operating temperature - junction | -55°C~175°C |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | DO-219AB |
| Capacitance @ vr, | 9pF @ 4V, 1MHz |
| Reverse recovery time | 1.8 µs |