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Taiwan Semiconductor Corporation HER308G B0G — Discrete Semiconductors

Taiwan Semiconductor Corporation HER308G B0G

MPNHER308G B0G
Active
$0.6300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

HER308G B0G specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - forward (Vf) (Max) @ if1.7 V @ 3 A
Current - reverse leakage @ vr10 µA @ 1000 V
Current - average rectified3A
Operating temperature - junction-55°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseDO-201AD, Axial
Capacitance @ vr,35pF @ 4V, 1MHz
Reverse recovery time75 ns