HER308G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 3A DO201AD
[IN STOCK] In Stock: 20,845 pcs
MOQ 10 · Cut Tape (CT) Tape & Box (TB) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 1000 V |
| Voltage - forward (Vf) (Max) @ if | 1.7 V @ 3 A |
| Current - reverse leakage @ vr | 10 µA @ 1000 V |
| Current - average rectified | 3A |
| Operating temperature - junction | -55°C ~ 150°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Cut Tape (CT) Tape & Box (TB) |
| Technology | Standard |
| Case | DO-201AD, Axial |
| Capacitance @ vr, | 35pF @ 4V, 1MHz |
| Reverse recovery time | 75 ns |
HER308G
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