Taiwan Semiconductor Corporation HER308G
MPNHER308G
Active
DIODE GEN PURP 1KV 3A DO201AD
$0.5600Ref. price · indicative, final on quote
PackagingDO-201AD, Axial
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 1000 V |
| Voltage - forward (Vf) (Max) @ if | 1.7 V @ 3 A |
| Current - reverse leakage @ vr | 10 µA @ 1000 V |
| Current - average rectified | 3A |
| Operating temperature - junction | -55°C ~ 150°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Cut Tape (CT) Tape & Box (TB) |
| Technology | Standard |
| Case | DO-201AD, Axial |
| Capacitance @ vr, | 35pF @ 4V, 1MHz |
| Reverse recovery time | 75 ns |