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Taiwan Semiconductor Corporation F1T7GH

Taiwan Semiconductor Corporation F1T7GH

MPNF1T7GH
Active

DIODE GEN PURP 1A TS-1

$0.35Ref. price · indicative, final on quote
PackagingT-18, Axial
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

F1T7GH specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if1.3 V @ 1 A
Current - reverse leakage @ vr5 µA @ 1000 V
Current - average rectified1A
Operating temperature - junction-55°C ~ 150°C
GradeAutomotive
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
QualificationAEC-Q101
CaseT-18, Axial
Capacitance @ vr,15pF @ 4V, 1MHz
Reverse recovery time500 ns