Taiwan Semiconductor Corporation ES3DBHR5G
MPNES3DBHR5G
Active
DIODE GEN PURP 200V 3A DO214AA
$0.72Ref. price · indicative, final on quote
PackagingDO-214AA, SMB
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Standard |
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 200 V |
| Voltage - forward (Vf) (Max) @ if | 1 V @ 3 A |
| Current - reverse leakage @ vr | 100 µA @ 200 V |
| Current - average rectified | 3A |
| Operating temperature - junction | -55°C ~ 150°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | DO-214AA, SMB |
| Capacitance @ vr, | 46pF @ 4V, 1MHz |
| Reverse recovery time | 35 ns |