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Taiwan Semiconductor Corporation 1N5397G

Taiwan Semiconductor Corporation 1N5397G

MPN1N5397G
Active

DIODE GEN PURP 600V 1.5A DO204AC

$0.33Ref. price · indicative, final on quote
PackagingDO-204AC, DO-15, Axial
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N5397G specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1 V @ 1.5 A
Current - reverse leakage @ vr5 µA @ 600 V
Current - average rectified1.5A
Operating temperature - junction-55°C ~ 150°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
CaseDO-204AC, DO-15, Axial
Capacitance @ vr,15pF @ 4V, 1MHz