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Taiwan Semiconductor Corporation 1N4007GHB0G — Discrete Semiconductors

Taiwan Semiconductor Corporation 1N4007GHB0G

MPN1N4007GHB0G
Active
$0.3100Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N4007GHB0G specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if1 V @ 1 A
Current - reverse leakage @ vr5 µA @ 1000 V
Current - average rectified1A
Operating temperature - junction-55°C~150°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageBulk
CaseDO-204AL, DO-41, Axial
Capacitance @ vr,10pF @ 4V, 1MHz