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Taiwan Semiconductor Corporation 1.5KE12AHB0G — Circuit Protection

1.5KE12AHB0G TVS Diode, 1500W, DO-201, AEC-Q101

MPN1.5KE12AHB0G
Active

Taiwan Semiconductor Corporation 1.5KE series Zener TVS diode, 1.5KE12AHB0G, 1500W peak pulse power, 10.2V reverse standoff, 16.7V clamp, unidirectional, DO-201AA axial, AEC-Q101 automotive grade, bulk.

$0.4993Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1.5KE12AHB0G specifications
ParameterValue
TypeZener
Series1.5KE
MountingThrough Hole
Voltage - breakdown11.4V
Voltage - clamping (Max) @ ipp16.7V
Voltage - reverse standoff10.2V
Current - peak pulse (10/1000μs)94A
Power - peak pulse1500W (1.5kW)
Power line protectionNo
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageBulk
QualificationAEC-Q101
CaseDO-201AA, DO-27, Axial
Unidirectional channels1

Product details

Active production — fit for new automotive designs

The 1.5KE12AHB0G: Its AEC-Q101 qualification and -55°C to 175°C operating junction range mean it is suited for under-hood and engine-bay transient protection where the ambient temperature exceeds 125°C.

Clamping performance and BOM-fit check

With a 10.2 V reverse standoff voltage and a 16.7 V maximum clamp at 94 A peak pulse current, this diode protects 12 V automotive rails from load-dump and inductive-load transients without interfering with normal bus voltage. The 11.4 V minimum breakdown voltage ensures the device starts clamping before the protected circuitry's absolute maximum rating is reached.

Package and mounting — DO-201 axial

The DO-201AA (DO-27) axial leaded package fits standard 0.100-inch pitch through-hole layouts; the cathode band identifies the unidirectional polarity. No power line protection feature is built in — this is a discrete transient suppressor, not a filtered TVS array.

Frequently asked questions

What automotive qualification does 1.5KE12AHB0G carry?

It is AEC-Q101 qualified, which covers automotive-grade discrete semiconductor reliability testing including temperature cycling, ESD, and high-temperature reverse bias.