STMicroelectronics STF9 Series

9 variants · STMicroelectronicsAll Discrete Semiconductors →

About the STMicroelectronics STF9 Series

The STMicroelectronics STF9 Series series groups 9 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. The listed variants share a common case of TO-220-3 Full Pack, drive voltage (Max rds on, min rds on) of 10V and FET feature of -. Variants differ by current - continuous drain (Id) @ 25°C, drain to source voltage and gate charge (Qg) (Max) @ vgs, so you can match the exact current - continuous drain (Id) @ 25°C your application requires using the selection guide below. The range mixes active and legacy part numbers, so you can source both current STMicroelectronics STF9 Series variants and discontinued ones from a single page.

Select a variant by

Current - continuous drain (Id) @ 25°C: 5A (Tc) · 5.5A (Tc) · 6.5A (Tc) · 7A (Tc) · 8A (Tc)
Drain to source voltage: 500 V · 600 V · 650 V · 800 V · 900 V
Gate charge (Qg) (Max) @ vgs: 10 nC @ 10 V · 12 nC @ 10 V · 17.4 nC @ 10 V · 20 nC @ 10 V · 72 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds: 315 pF @ 100 V · 320 pF @ 100 V · 340 pF @ 100 V · 452 pF @ 50 V · 570 pF @ 50 V · 2115 pF @ 25 V
Operating temperature: -55°C ~ 150°C (TJ) · 150°C (TJ) · 150°C(TJ)
Power dissipation: 20W (Tc) · 25W (Tc) · 40W (Tc)
Rds on (Max) @ id, vgs: 1.3Ohm @ 3.6A, 10V · 560mOhm @ 3.7A, 10V · 745mOhm @ 3.25A, 10V · 780mOhm @ 3A, 10V · 900mOhm @ 2.5A, 10V · 900mOhm @ 3.5A, 10V

Shared specifications

Case: TO-220-3 Full Pack
Drive voltage (Max rds on, min rds on): 10V
FET feature: -
FET type: N-Channel
Mounting: Through Hole
Package: Tube
Technology: MOSFET (Metal Oxide)

Variant comparison

Parameter	STF9NM60N	STF9N60M2	STF9N65M2	STF9N80K5	STF9NK90Z	STF9NM50N
Current - continuous drain (Id) @ 25°C	6.5A (Tc)	5.5A (Tc)	5A (Tc)	7A (Tc)	8A (Tc)	5A (Tc)
Drain to source voltage	600 V	600 V	650 V	800 V	900 V	500 V
Gate charge (Qg) (Max) @ vgs	17.4 nC @ 10 V	10 nC @ 10 V	10 nC @ 10 V	12 nC @ 10 V	72 nC @ 10 V	20 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds	452 pF @ 50 V	320 pF @ 100 V	315 pF @ 100 V	340 pF @ 100 V	2115 pF @ 25 V	570 pF @ 50 V
Operating temperature	150°C(TJ)	150°C (TJ)	150°C(TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	150°C (TJ)
Power dissipation	25W (Tc)	20W (Tc)	20W (Tc)	25W (Tc)	40W (Tc)	25W (Tc)
Rds on (Max) @ id, vgs	745mOhm @ 3.25A, 10V	780mOhm @ 3A, 10V	900mOhm @ 2.5A, 10V	900mOhm @ 3.5A, 10V	1.3Ohm @ 3.6A, 10V	560mOhm @ 3.7A, 10V

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