STMicroelectronics MDmesh II Plus, N-Channel MOSFET, 600 V drain-source, 5.5 A continuous drain at 25°C, 780 mOhm Rds(on) at 3 A and 10 V, 10 nC gate charge, TO-220-3 Full Pack (TO-220FP), through-hole mount.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 5.5A (Tc) |
| Power dissipation | 20W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 780mOhm @ 3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 10 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 320 pF @ 100 V |
The STF9N60M2 N-channel MOSFET in a TO-220FP full-pack package isolates the back tab electrically — no insulating pad or washer needed between the device and the heatsink, which cuts assembly labour and BOM cost in offline flyback converters, auxiliary power supplies, and PFC stages.
That figure is specified at 25°C junction; expect the typical Rds(on) to rise with temperature per the normalised curve in the datasheet.
It is supplied in a TO-220-3 Full Pack (TO-220FP) through-hole package. The full-pack moulding isolates the mounting tab, so no additional insulation is needed between the device and the heatsink.