STMicroelectronics · MDmesh™ II Plus Series
STMicroelectronics MDmesh II Plus, N-Channel MOSFET, 600 V drain-source, 5.5 A continuous drain at 25°C, 780 mOhm Rds(on) at 3 A and 10 V, 10 nC gate charge, TO-220-3 Full Pack (TO-220FP), through-hole mount.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 5.5A (Tc) |
| Power dissipation | 20W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 780mOhm @ 3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 10 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 320 pF @ 100 V |
The STF9N60M2 N-channel MOSFET in a TO-220FP full-pack package isolates the back tab electrically — no insulating pad or washer needed between the device and the heatsink, which cuts assembly labour and BOM cost in offline flyback converters, auxiliary power supplies, and PFC stages.
