600 V, 6.5 A N-channel in TO-220FP
The STF9NM60N is a 600 V, 6.5 A N-channel MOSFET from STMicroelectronics' MDmesh™ II series, housed in a through-hole TO-220-3 Full Pack package. With a maximum Rds(on) of 745 mOhm at 3.25 A and 10 V gate drive, this device targets high-voltage switching applications where conduction losses need to be managed in a fully isolated package. The TO-220FP full-pack construction means the back tab is fully molded — no exposed metal — so it mounts directly to a heatsink or chassis without an insulating pad, simplifying assembly in power supplies and lighting ballasts.
Switching performance and thermal budget
Maximum power dissipation is 25 W at the case (Tc), with a 150 °C maximum junction temperature — the TO-220FP's thermal resistance to the heatsink is higher than a standard TO-220 due to the full mold, so the real-world continuous current at elevated ambient will be lower than the 6.5 A Tc rating.
Active production, ROHS3 compliant
Supplied in tube packaging, the base product number STF9NM60 covers the full family — verify the suffix for tape-and-reel variants if your pick-and-place line requires reel feed.