STF9NK90Z

STMicroelectronics · SuperMESH™ Series

STMicroelectronics SuperMESH™ N-channel MOSFET, 900 V drain-source, 1.3 Ohm Rds(on) at 10 V, 8 A continuous drain, TO-220-3 Full Pack (TO-220FP), -55 to 150 °C junction.

STMicroelectronics STF9NK90Z
Download datasheet (PDF)
[IN STOCK] In Stock: 500 pcs
$1.30/ pc

Volume pricing

Buy Now

MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STF9NK90Z specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation40W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs1.3Ohm @ 3.6A, 10V
Gate charge (Qg) (Max) @ vgs72 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2115 pF @ 25 V

Technical details

STF9NK90Z N-channel MOSFET with 900 V drain-source rating and 8 A continuous drain current targets offline flyback converters and PFC stages.

On-resistance and gate charge — the thermal and drive budget

Rds(on) is 1.3 Ohm maximum at 3.6 A and 10 V. The 40 W power dissipation limit constrains continuous operation below the 8 A rating. Gate charge is 72 nC at 10 V. Input capacitance is 2115 pF at 25 V.

Temperature range and mounting — industrial and automotive environments

The TO-220FP package is a through-hole mount, suited for board-level assembly in power supplies, motor drives, and industrial control modules where vibration resistance and thermal cycling are concerns.

The part is ROHS3 compliant, satisfying the EU RoHS directive for lead-free assembly.

STF9NK90Z
[ALLOC] verified
Quote