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STMicroelectronics STF9NK90Z — Discrete Semiconductors

STF9NK90Z N-Channel MOSFET, 900 V, 1.3 Ohm, TO-220FP

MPNSTF9NK90Z
Active

STMicroelectronics SuperMESH™ N-channel MOSFET, 900 V drain-source, 1.3 Ohm Rds(on) at 10 V, 8 A continuous drain, TO-220-3 Full Pack (TO-220FP), -55 to 150 °C junction.

$4.7300Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesSuperMESH™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF9NK90Z specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation40W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs1.3Ohm @ 3.6A, 10V
Gate charge (Qg) (Max) @ vgs72 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2115 pF @ 25 V

Product details

STF9NK90Z N-channel MOSFET with 900 V drain-source rating and 8 A continuous drain current targets offline flyback converters and PFC stages.

On-resistance and gate charge — the thermal and drive budget

Rds(on) is 1.3 Ohm maximum at 3.6 A and 10 V. The 40 W power dissipation limit constrains continuous operation below the 8 A rating. Gate charge is 72 nC at 10 V. Input capacitance is 2115 pF at 25 V.

Temperature range and mounting — industrial and automotive environments

The TO-220FP package is a through-hole mount, suited for board-level assembly in power supplies, motor drives, and industrial control modules where vibration resistance and thermal cycling are concerns.

The part is ROHS3 compliant, satisfying the EU RoHS directive for lead-free assembly.

Frequently asked questions

Is STF9NK90Z RoHS compliant?

Yes, the STF9NK90Z is ROHS3 compliant, meeting the EU RoHS directive for lead-free manufacturing.