STP65N150M9
STMicroelectronics STP65N150M9
MPNSTP65N150M9
Active
N-CHANNEL 650 V, 128 MOHM TYP.,
$5.10012Price · pay online now
$5.10 / ea
8 in stock — maximum per order · 3–4 days lead time
PackagingTO-220-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 20A (Tc) |
| Power dissipation | 140W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.2V @ 250µA |
| Rds on (Max) @ id, vgs | 150mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 32 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1239 pF @ 400 V |