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ROHM Semiconductor US6M11TR

ROHM Semiconductor US6M11TR

MPNUS6M11TR
End of Life

MOSFET N/P-CH 20V/12V TUMT6

$0.67Ref. price · indicative, final on quote
Packaging6-SMD, Flat Leads
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

US6M11TR specifications
ParameterValue
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage20V, 12V
Current - continuous drain (Id) @ 25°C1.5A, 1.3A
Power - max1W
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case6-SMD, Flat Leads
Vgs(th) (Max) @ id1V @ 1mA
Rds on (Max) @ id, vgs180mOhm @ 1.5A, 4.5V
Gate charge (Qg) (Max) @ vgs1.8nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds110pF @ 10V