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ROHM Semiconductor UMZ16NFHT106 — Discrete Semiconductors

UMZ16NFHT106 ROHM Zener Array, 16.18 V, 200 mW, AEC-Q101

MPNUMZ16NFHT106
End of Life

ROHM Semiconductor Automotive, AEC-Q101 zener array, UMZ16NFHT106, 1 Pair Common Anode, 16.18 V, 200 mW, SC-70 SOT-323, UMD3.

$0.47Ref. price · indicative, final on quote
PackagingSC-70, SOT-323
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

UMZ16NFHT106 specifications
ParameterValue
SeriesAutomotive, AEC-Q101
MountingSurface Mount
Voltage - zener (Nom)16.18 V
Current - reverse leakage @ vr100 nA @ 12 V
Power - max200 mW
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Tolerance±2%
Configuration1 Pair Common Anode
CaseSC-70, SOT-323
Impedance (Max)50 Ohms

Product details

16.18 V dual common-anode zener array

The UMZ16NFHT106 is a dual zener diode array in a common-anode configuration, with a nominal zener voltage of 16.18 V and a power dissipation rating of 200 mW. It is qualified to AEC-Q101, the automotive discrete semiconductor stress-test standard, and rated for a junction temperature up to 150°C.

Leakage and impedance at the operating point

Reverse leakage is specified at 100 nA maximum when biased at 12 V — this is the standby current the clamping leg draws before the zener threshold is reached. Maximum zener impedance (Zzt) is 50 Ohms, which sets the dynamic resistance in the breakdown region and influences the voltage regulation accuracy under varying current.