Dual NPN pre-biased in SOT-363
The UMH4NTN from ROHM Semiconductor is a dual NPN pre-biased transistor in a 6-pin SOT-363 package (also designated UMT6). Each transistor integrates a 10 kOhm base resistor (R1), eliminating the need for an external bias resistor in switching and interface circuits.
50 V breakdown, 100 mA collector current
Each NPN side is rated for a collector-emitter breakdown voltage of 50 V and a continuous collector current of 100 mA, with a total package power dissipation of 150 mW. The saturation voltage is specified at 300 mV maximum at Ib = 1 mA, Ic = 10 mA, which keeps conduction losses low in low-current switching applications like level translation or relay pre-drive.