UMH37NTN
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RoHS Compliant · Lead-Free EIA-481 Standard
ROHM Semiconductor / Discrete Semiconductors

UMH37NTN Dual NPN Pre-Biased Transistor, 20V 400mA SOT-363

MPN UMH37NTN
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ROHM Semiconductor UMH37NTN, dual NPN pre-biased (digital) transistor array, 20 V Vceo, 400 mA Ic, 10 kΩ base resistor, 150 mW, 35 MHz ft, SOT-363 (UMT6) package, surface mount.

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[SPEC] Essential Parameters Snapshot Full Specifications (12)
Package / Case 6-TSSOP, SC-88, SOT-363

Full Technical Specifications

12 Parameters
UMH37NTN specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown20V
Current - collector (Ic)400mA
Current - collector cutoff500nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce820 @ 10mA, 5V
Power - max150mW
Frequency - transition35MHz
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Resistor - base (R1)10kOhms
Vce saturation (Max) @ ib, ic100mV @ 3mA, 30mA
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Technical Details & Description

Dual pre-biased NPN in a 6-pin SOT-363

The ROHM UMH37NTN packs two NPN transistors with integrated bias resistors into a single SOT-363 (UMT6) package. Each transistor has a 10 kΩ base resistor (R1) and is rated for 20 V collector-emitter breakdown and 400 mA continuous collector current. The pre-biased configuration means the base drive resistor is already on-die, saving two external resistors per channel and shrinking the board footprint for switching loads like relay coils, solenoid drivers, or LED indicators. The low Vce(sat) of 100 mV maximum at 30 mA keeps conduction losses minimal in low-voltage switching. The 150 mW total power dissipation limits continuous current in free air; for loads above 100 mA per channel, check the derating against ambient temperature.

The surface-mount package is suited for automated assembly and reflow soldering. No special thermal management is needed at the 150 mW power level, but the small package limits heat sinking — keep trace connections to the collector pads generous if running both channels near the current limit.

Frequently asked questions

Is UMH37NTN equivalent to DTC114E?

The UMH37NTN and DTC114E are both dual NPN pre-biased transistors, but they differ in key ratings. The UMH37NTN uses a 10 kΩ base resistor, while the DTC114E typically uses a 10 kΩ base resistor with an additional 10 kΩ base-emitter resistor (R2). The UMH37NTN has no R2, so the base-emitter junction is not shunted — this changes the input threshold and off-state leakage behavior. Check your circuit's base drive requirements before substituting.

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