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ROHM Semiconductor UMH2NTN — Memory (DRAM / SRAM / Flash / EEPROM)

UMH2NTN Dual NPN Pre-Biased Transistor, 50 V, 100 mA

MPNUMH2NTN
End of Life

Rohm Semiconductor UMH2NTN dual NPN pre-biased transistor array, 50 V VCEO, 100 mA IC, 250 MHz fT, 47 kΩ base and emitter resistors, SOT-363 package, 150 mW power dissipation.

$0.48Ref. price · indicative, final on quote
Packaging6-TSSOP, SC-88, SOT-363
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

UMH2NTN Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce68 @ 5mA, 5V
Power - max150mW
Frequency250MHz
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Resistor - base (R1)47kOhms
Resistor - emitter base (R2)47kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Two NPN transistors with built-in bias resistors

The Rohm Semiconductor UMH2NTN packs two NPN pre-biased transistors into a single SOT-363 package, each with 47 kΩ resistors in both the base and emitter-base legs. That means each transistor channel arrives with its bias network already on-die — no external R1 or R2 needed, which cuts two resistors per channel from the BOM and shrinks the layout to a 2.0 mm × 2.1 mm footprint. The 250 MHz transition frequency keeps switching clean into the low-MHz range, adequate for PWM fan control or serial bus translation up to a few megahertz.

Saturation voltage and gain at low current

VCE(sat) is specified at 300 mV maximum with 500 µA base drive and 10 mA collector current — a typical operating point for driving an optocoupler LED or a small relay coil. The DC current gain minimum of 68 at 5 mA, 5 V means the part stays in saturation with modest base current, which matters when the drive comes from a GPIO pin with limited source capability. Off-state leakage is 500 nA maximum, low enough to avoid false triggering in high-impedance loads.

Frequently asked questions

What is the closest functional equivalent to UMH2NTN?

The closest functional equivalent is the UMB2NTN, which is a dual PNP pre-biased transistor with the same 47 kΩ resistors, 50 V rating, 100 mA current, and SOT-363 package. For NPN polarity, the EMG2T2R is a pin-compatible alternative with identical ratings. Both are valid second-source candidates for dual-sourcing the same footprint.

What package does UMH2NTN come in?

UMH2NTN is supplied in a 6-pin SOT-363 package (also designated as 6-TSSOP, SC-88, or UMT6).