Skip to main content
ROHM Semiconductor SST3906T116 — Discrete Semiconductors

SST3906T116 ROHM PNP Transistor, 40V 0.2A, SOT-23-3

MPNSST3906T116
End of Life

ROHM Semiconductor SST3906T116 PNP transistor, 40 V VCEO, 200 mA IC, 350 mW, SOT-23-3, surface mount.

$0.34Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
StockIn Stock (20)
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

SST3906T116 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typePNP
Voltage - collector emitter breakdown40 V
Current - collector (Ic)200 mA
Current - collector cutoff50nA
DC current gain (hFE) (Min) @ ic, vce100 @ 10mA, 1V
Power - max350 mW
Frequency250MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic400mV @ 5mA, 50mA

Product details

Device identity and key ratings

The SST3906T116 from ROHM Semiconductor is a general-purpose PNP transistor rated for 40 V collector-emitter breakdown and 200 mA continuous collector current. Maximum power dissipation is 350 mW, and the device is specified for operation up to 150°C junction temperature. The transition frequency of 250 MHz makes it suitable for switching and amplification up to the VHF range.

DC current gain and saturation voltage

Vce saturation is 400 mV max at Ib=5 mA and Ic=50 mA, which keeps conduction losses low in switching applications. Collector cutoff current is a low 50 nA max, minimizing leakage in off-state conditions.

Frequently asked questions

Where can I buy SST3906T116 and how do I get a price?

Sourced through independent distribution channels.