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ROHM Semiconductor SP8K32HZGTB

ROHM Semiconductor SP8K32HZGTB

MPNSP8K32HZGTB
End of Life

60V DUAL NCH+NCH POWER MOSFET. S

$1.73Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SP8K32HZGTB specifications
ParameterValue
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C4.5A (Ta)
Power - max2W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs65mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs10nC @ 5V
Input capacitance (Ciss) (Max) @ vds500pF @ 10V