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ROHM Semiconductor SH8KC7TB1

ROHM Semiconductor SH8KC7TB1

MPNSH8KC7TB1
End of Life

MOSFET 2N-CH 60V 10.5A 8SOP

$1.63Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SH8KC7TB1 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C10.5A (Ta)
Power - max2W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs12.4mOhm @ 10.5A, 10V
Gate charge (Qg) (Max) @ vgs22nC @ 10V
Input capacitance (Ciss) (Max) @ vds1400pF @ 30V