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ROHM Semiconductor SH8K26GZ0TB1

ROHM Semiconductor SH8K26GZ0TB1

MPNSH8K26GZ0TB1
End of Life

40V NCH+NCH POWER MOSFET : MIDDL

$1.32Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SH8K26GZ0TB1 specifications
ParameterValue
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage40V
Current - continuous drain (Id) @ 25°C6A (Ta)
Power - max2W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs38mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs2.9nC @ 5V
Input capacitance (Ciss) (Max) @ vds280pF @ 10V