Skip to main content
ROHM Semiconductor SH8J66TB1

ROHM Semiconductor SH8J66TB1

MPNSH8J66TB1
End of Life

MOSFET 2P-CH 30V 9A 8SOP

$2.46Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SH8J66TB1 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C9A
Power - max2W
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 P-Channel (Dual)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs18.5mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs35nC @ 5V
Input capacitance (Ciss) (Max) @ vds3000pF @ 10V