750 V SiC FET for high-efficiency power stages
The SCT4013DRC15 is a 750 V, 105 A N-channel SiC FET in a TO-247-4L through-hole package, built on ROHM's trench-structure SiC technology.
Gate charge and switching speed — what the 170 nC figure means for the driver
Total gate charge Qg is 170 nC at 18 V drive. For a 100 kHz switching frequency the average gate-drive current is 17 mA (Qg × fsw); a gate driver rated for 2-4 A peak can charge the gate in under 100 ns, keeping the switching transition within the dead-time budget of a half-bridge. The 4580 pF input capacitance at 500 V drain confirms the reactive load the driver sees during the Miller plateau. The 4-pin TO-247-4L package routes the source Kelvin connection separately from the power path, reducing the common-source inductance that slows turn-off in a 3-pin package. For a 750 V, 105 A switch this inductance reduction can cut turn-off loss by 30-40% compared to the same die in a standard TO-247.
Active lifecycle and compliance posture
ROHS3 compliant means no exemptions for lead, mercury, or phthalates — the part ships under the current EU RoHS directive without a compliance gap. The TO-247-4L package is a standard through-hole footprint shared across ROHM's 4-pin SiC FET family, so the board layout transfers if a different current rating is needed later.