Active production with automotive-grade SiC
The SCT3160KW7HRTL: It carries AEC-Q101 qualification and is designated Grade Automotive — the PPAP-ready pedigree an OEM auditor expects for under-hood or chassis-domain power stages.
208 mOhm on-resistance at 18 V gate drive
Maximum Rds(on) is 208 mOhm measured at 5 A drain current with 18 V applied to the gate — the 18 V drive voltage is the design-in benchmark for achieving the stated on-resistance. At the nominal 18 V gate drive the gate charge (Qg) totals 42 nC, which sets the gate-driver power budget: a 100 kHz switching frequency draws about 4.2 mA from the driver supply, well within a standard isolated gate-driver IC. Input capacitance (Ciss) is 398 pF at 800 V drain bias — this low capacitance enables fast voltage transitions at the switching node, reducing cross-conduction overlap losses in half-bridge topologies.
TO-263-7L surface-mount footprint
The supplier device package is TO-263-7L, the D²PAK-derived surface-mount outline with an additional seventh pin — typically used for a Kelvin-source connection to decouple the gate-drive return from the power current path, or for a dedicated gate-return sense line to improve switching speed and reduce common-source inductance. The part mounts on a copper landing pad that serves as the primary heat path to the PCB; the exposed drain tab must be soldered to a thermal via array to achieve the rated current at elevated ambient.
The AEC-Q101 qualification is the relevant compliance standard for automotive-grade discrete semiconductors — it covers temperature cycling, high-temperature reverse bias, and humidity testing per the AEC stress tests. RoHS and REACH documentation is provided by ROHM Semiconductor with each shipment.