1200 V SiC switch — the ratings that define the power stage
The SCT3080KRC15 is a 1200 V, 31 A continuous-drain SiC N-channel MOSFET in a TO-247-4L package. The 104 mOhm Rds(on) at 18 V gate drive and 10 A drain current is the on-resistance figure that sets conduction loss in a hard-switching converter — at 10 A the drop is about 1 V, so the I²R loss at that point is 10 W, well within the 165 W power-dissipation ceiling. Built on ROHM's SiC trench technology, this part switches faster than a comparable Si MOSFET because the material's wider bandgap reduces the stored charge in the body diode — the 60 nC gate charge at 18 V and 785 pF input capacitance at 800 V are low enough that a standard gate-driver IC with a few amps of peak current can drive it at 50-100 kHz without excessive cross-conduction.
Thermal headroom and package advantage
Rated for a 175°C maximum junction temperature, the SCT3080KRC15 gives 25°C more margin than a typical 150°C Si MOSFET — this means the same heatsink can handle higher ambient temperatures or a smaller heatsink can be used for the same dissipation. The TO-247-4L package includes a Kelvin-source pin (the fourth pin) that separates the gate-drive return from the power current path, reducing the common-source inductance that causes gate ringing at high di/dt. The 5.6 V maximum gate threshold at 5 mA means the device turns on fully with a 15-18 V gate drive — standard for SiC gate drivers. The +22 V / -4 V Vgs maximum allows a -4 V off-state bias to keep the device firmly off during the dead-time, which is common practice to prevent shoot-through in half-bridge topologies.