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ROHM Semiconductor SCT3060ARC14 — Discrete Semiconductors
ROHM Semiconductor

ROHM SCT3060ARC14 SiCFET, 650 V, 39 A, TO-247-4

MPNSCT3060ARC14
End of Life

ROHM Semiconductor SCT3060ARC14 SiCFET, N-channel, 650 V drain-source, 39 A continuous drain, 78 mOhm Rds(on) at 18 V, TO-247-4L through-hole package, tube.

$23.34Ref. price · indicative, final on quote
SCT3060ARC14 datasheet
PackagingTO-247-4
StockIn Stock (23)
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

SCT3060ARC14 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)18V
Current - continuous drain (Id) @ 25°C39A (Tc)
Power dissipation165W
Operating temperature175°C (TJ)
PackageTube
Vgs+22V, -4V
TechnologySiCFET (Silicon Carbide)
CaseTO-247-4
Vgs(th) (Max) @ id5.6V @ 6.67mA
Rds on (Max) @ id, vgs78mOhm @ 13A, 18V
Gate charge (Qg) (Max) @ vgs58 nC @ 18 V
Input capacitance (Ciss) (Max) @ vds852 pF @ 500 V

Product details

Package and board-fit — TO-247-4 with Kelvin source

The SCT3060ARC14 ships in a TO-247-4L through-hole package. The fourth pin is a Kelvin source connection that isolates the gate-drive return from the power current path — this reduces the common-source inductance in the gate loop, so the device switches cleanly without the gate-voltage ringing that plagues three-pin TO-247 parts at high di/dt.

What the headline ratings mean for the switching stage

The 78 mOhm max on-resistance at 13 A, 18 V gate drive sets the conduction loss — at 13 A the dissipation is roughly 13 W, well within the 165 W power-dissipation ceiling when the case is properly heatsunk. Gate charge is 58 nC at 18 V. A gate driver delivering 2 A can switch this FET in about 30 ns, which keeps switching losses low at frequencies up to 100 kHz. Input capacitance is 852 pF at 500 V — low for a 650 V SiC device, so the driver sees a lighter capacitive load than comparable Si MOSFETs.

Frequently asked questions

What is the closest functional second-source — SCT3080KRC15?

The SCT3080KRC15 is a 1200 V SiCFET in the same TO-247-4L package, with 104 mOhm Rds(on) at 10 A, 18 V and 60 nC gate charge. It will not drop into a 650 V design without rewiring because the drain-source voltage rating is higher, but the pinout and gate-drive voltage are the same. For a 650 V bus, the SCT3060ARC14 is the correct voltage-class part.