ROHM Semiconductor SCT2750NYTB
MPNSCT2750NYTB
End of Life
SICFET N-CH 1700V 5.9A TO268
$6.99Ref. price · indicative, final on quote
PackagingTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 1700 V |
| Drive voltage (Max rds on, min rds on) | 18V |
| Current - continuous drain (Id) @ 25°C | 5.9A (Tc) |
| Power dissipation | 57W (Tc) |
| Operating temperature | 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +22V, -6V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Vgs(th) (Max) @ id | 4V @ 630µA |
| Rds on (Max) @ id, vgs | 975mOhm @ 1.7A, 18V |
| Gate charge (Qg) (Max) @ vgs | 17 nC @ 18 V |
| Input capacitance (Ciss) (Max) @ vds | 275 pF @ 800 V |