ROHM Semiconductor RYC002N05T316
MPNRYC002N05T316
End of Life
MOSFET N-CHANNEL 50V 200MA SST3
$0.37Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 50 V |
| Drive voltage (Max rds on, min rds on) | 4.5V |
| Current - continuous drain (Id) @ 25°C | 200mA (Ta) |
| Power dissipation | 350mW (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 800mV @ 1mA |
| Rds on (Max) @ id, vgs | 2.2Ohm @ 200mA, 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 26 pF @ 10 V |