ROHM Semiconductor RXH090N03TB1
MPNRXH090N03TB1
End of Life
4V DRIVE NCH MOSFET: MOSFETS ARE
$1.41Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4V, 10V |
| Current - continuous drain (Id) @ 25°C | 9A (Ta) |
| Power dissipation | 2W (Ta) |
| Operating temperature | 150°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2.5V @ 1mA |
| Rds on (Max) @ id, vgs | 17mOhm @ 9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.8 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 440 pF @ 10 V |