Power switching for 150 V rails
The RX3R05BBHC16: With a maximum Rds(on) of 29 mOhm at 25 A and 10 V gate drive, it suits high-efficiency switching in DC-DC converters, motor drives, and battery management circuits operating off 48 V to 72 V buses where the 150 V breakdown gives headroom for transients.
Gate drive and switching loss
Total gate charge is 37 nC at 10 V, and the input capacitance measures 2150 pF at 75 V Vds. These numbers tell you the driver current needed for a given switching frequency — at 100 kHz, the average gate drive current is about 3.7 mA, well within a standard gate driver's capability. The threshold voltage is 4 V max at 1 mA, so a 10 V gate drive ensures the FET is fully enhanced with margin.
Thermal and package fit
Maximum power dissipation is 89 W at case temperature, and the junction temperature limit is 150°C. The TO-220AB (TO-220-3) through-hole package mounts into a standard 0.100-inch pitch footprint on a heatsink — the tab is the drain. For a 50 A continuous application, the Rds(on) at 150°C junction will roughly double from the 25°C value, so budget the conduction loss at the hot junction, not the datasheet 25°C figure.