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RW1C026ZPT2CR

ROHM Semiconductor RW1C026ZPT2CR

MPNRW1C026ZPT2CR
End of Life

MOSFET P-CH 20V 2.5A 6WEMT

$0.52Ref. price · indicative, final on quote
Packaging6-SMD, Flat Leads
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RW1C026ZPT2CR specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C2.5A (Ta)
Power dissipation700mW (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±10V
TechnologyMOSFET (Metal Oxide)
Case6-SMD, Flat Leads
Vgs(th) (Max) @ id1V @ 1mA
Rds on (Max) @ id, vgs70mOhm @ 2.5A, 4.5V
Gate charge (Qg) (Max) @ vgs10 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1250 pF @ 10 V