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ROHM Semiconductor RV8C010UNHZGG2CR

ROHM Semiconductor RV8C010UNHZGG2CR

MPNRV8C010UNHZGG2CR
End of Life

MOSFET N-CH 20V 1A DFN1010-3W

$0.61Ref. price · indicative, final on quote
Packaging3-XFDFN
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RV8C010UNHZGG2CR specifications
ParameterValue
SeriesAutomotive, AEC-Q101
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Current - continuous drain (Id) @ 25°C1A (Ta)
Power dissipation1W
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case3-XFDFN
Vgs(th) (Max) @ id1V @ 1mA
Rds on (Max) @ id, vgs470mOhm @ 500mA, 4.5V
Input capacitance (Ciss) (Max) @ vds40 pF @ 10 V