RV4E031RPHZGTCR1 - ROHM Semiconductor
MPNRV4E031RPHZGTCR1
End of Life
MOSFET P-CH 30V 3.1A DFN1616-6W
$0.83Ref. price · indicative, final on quote
Packaging6-PowerWFDFN
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | Automotive, AEC-Q101 |
| FET type | P-Channel |
| Mounting | Surface Mount, Wettable Flank |
| Drain to source voltage | 30 V |
| Current - continuous drain (Id) @ 25°C | 3.1A (Ta) |
| Power dissipation | 1.5W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-PowerWFDFN |
| Vgs(th) (Max) @ id | 2.5V @ 1mA |
| Rds on (Max) @ id, vgs | 105mOhm @ 3.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 4.8 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 460 pF @ 10 V |