ROHM Semiconductor RSJ650N10TL
MPNRSJ650N10TL
End of Life
MOSFET N-CH 100V 65A LPTS
$6.32Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4V, 10V |
| Current - continuous drain (Id) @ 25°C | 65A (Ta) |
| Power dissipation | 100W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 2.5V @ 1mA |
| Rds on (Max) @ id, vgs | 9.1mOhm @ 32.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 260 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 10780 pF @ 25 V |