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ROHM Semiconductor RS3E135BNGZETB

ROHM Semiconductor RS3E135BNGZETB

MPNRS3E135BNGZETB
End of Life

MOSFET N-CHANNEL 30V 9.5A 8SOP

$1.03Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RS3E135BNGZETB specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9.5A (Ta)
Power dissipation2W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs14.6mOhm @ 9.5A, 10V
Gate charge (Qg) (Max) @ vgs8.3 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds680 pF @ 15 V