ROHM Semiconductor RQ6E080AJTCR
MPNRQ6E080AJTCR
End of Life
MOSFET N-CH 30V 8A TSMT6
$0.8Ref. price · indicative, final on quote
PackagingSOT-23-6 Thin, TSOT-23-6
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 8A (Ta) |
| Power dissipation | 950mW (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-23-6 Thin, TSOT-23-6 |
| Vgs(th) (Max) @ id | 1.5V @ 2mA |
| Rds on (Max) @ id, vgs | 16.5mOhm @ 8A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 16.2 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1810 pF @ 15 V |