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ROHM Semiconductor RQ3E180BNTB1

ROHM Semiconductor RQ3E180BNTB1

MPNRQ3E180BNTB1
End of Life

NCH 30V 39A MIDDLE POWER MOSFET:

$1.99Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RQ3E180BNTB1 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C18A (Ta), 39A (Tc)
Power dissipation2W (Ta), 20W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs3.9mOhm @ 18A, 10V
Gate charge (Qg) (Max) @ vgs72 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3500 pF @ 15 V