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ROHM Semiconductor RQ3E150GNTB

ROHM Semiconductor RQ3E150GNTB

MPNRQ3E150GNTB
End of Life

MOSFET N-CH 30V 15A 8HSMT

$0.62Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RQ3E150GNTB specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C15A (Ta)
Power dissipation2W (Ta), 17.2W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs6.1mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs15.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds850 pF @ 15 V