RQ3E110AJTB

ROHM Semiconductor

MOSFET N-CH 30V 11A/24A 8HSMT

ROHM Semiconductor RQ3E110AJTB
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RQ3E110AJTB specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C11A (Ta), 24A (Tc)
Power dissipation2W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id1.5V @ 1mA
Rds on (Max) @ id, vgs11.7mOhm @ 11A, 4.5V
Gate charge (Qg) (Max) @ vgs13.5 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1500 pF @ 15 V
RQ3E110AJTB
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