RQ1C065UNTR - ROHM Semiconductor
MPNRQ1C065UNTR
End of Life
MOSFET N-CH 20V 6.5A TSMT8
$0.68Ref. price · indicative, final on quote
Packaging8-SMD, Flat Lead
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 6.5A (Ta) |
| Power dissipation | 700mW (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SMD, Flat Lead |
| Vgs(th) (Max) @ id | 1V @ 1mA |
| Rds on (Max) @ id, vgs | 22mOhm @ 6.5A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 11 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 870 pF @ 10 V |