Skip to main content
ROHM Semiconductor RGW50TS65DGC11

ROHM Semiconductor RGW50TS65DGC11

MPNRGW50TS65DGC11
End of Life

IGBT TRNCH FIELD 650V 50A TO247N

$5.66Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RGW50TS65DGC11 specifications
ParameterValue
IGBT typeTrench Field Stop
Input typeStandard
MountingThrough Hole
Voltage - collector emitter breakdown650 V
Current - collector (Ic)50 A
Current - collector pulsed100 A
Power - max156 W
Operating temperature-40°C ~ 175°C (TJ)
PackageTube
Gate charge73 nC
CaseTO-247-3
Test condition400V, 25A, 10Ohm, 15V
Switching energy390µJ (on), 430µJ (off)
Td (on/off) @ 25°C35ns/102ns
Vce(on) (Max) @ vge, ic1.9V @ 15V, 25A