ROHM Semiconductor RGT8NS65DGC9
MPNRGT8NS65DGC9
End of Life
IGBT TRENCH FIELD 650V 8A TO262
$2.1Ref. price · indicative, final on quote
PackagingTO-262-3 Long Leads, I2PAK, TO-262AA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| IGBT type | Trench Field Stop |
| Input type | Standard |
| Mounting | Through Hole |
| Voltage - collector emitter breakdown | 650 V |
| Current - collector (Ic) | 8 A |
| Current - collector pulsed | 12 A |
| Power - max | 65 W |
| Operating temperature | -40°C ~ 175°C (TJ) |
| Package | Tube |
| Gate charge | 13.5 nC |
| Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Test condition | 400V, 4A, 50Ohm, 15V |
| Td (on/off) @ 25°C | 17ns/69ns |
| Vce(on) (Max) @ vge, ic | 2.1V @ 15V, 4A |
| Reverse recovery time | 40 ns |