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ROHM Semiconductor RGT8NL65DGTL

ROHM Semiconductor RGT8NL65DGTL

MPNRGT8NL65DGTL
End of Life

IGBT TRENCH FIELD 650V 8A LPDS

$2.13Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RGT8NL65DGTL specifications
ParameterValue
IGBT typeTrench Field Stop
Input typeStandard
MountingSurface Mount
Voltage - collector emitter breakdown650 V
Current - collector (Ic)8 A
Current - collector pulsed12 A
Power - max65 W
Operating temperature-40°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Gate charge13.5 nC
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Test condition400V, 4A, 50Ohm, 15V
Td (on/off) @ 25°C17ns/69ns
Vce(on) (Max) @ vge, ic2.1V @ 15V, 4A
Reverse recovery time40 ns