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ROHM Semiconductor RGT30NS65DGC9

ROHM Semiconductor RGT30NS65DGC9

MPNRGT30NS65DGC9
End of Life

IGBT TRENCH FIELD 650V 30A TO262

$2.9Ref. price · indicative, final on quote
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RGT30NS65DGC9 specifications
ParameterValue
IGBT typeTrench Field Stop
Input typeStandard
MountingThrough Hole
Voltage - collector emitter breakdown650 V
Current - collector (Ic)30 A
Current - collector pulsed45 A
Power - max133 W
Operating temperature-40°C ~ 175°C (TJ)
PackageTube
Gate charge32 nC
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Test condition400V, 15A, 10Ohm, 15V
Td (on/off) @ 25°C18ns/64ns
Vce(on) (Max) @ vge, ic2.1V @ 15V, 15A
Reverse recovery time55 ns